Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-06-12
2007-06-12
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S159000
Reexamination Certificate
active
10885636
ABSTRACT:
An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.
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Furuno Makoto
Imai Keitaro
Maekawa Shinji
Nakamura Osamu
Yamazaki Shunpei
Nguyen Tuan H.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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