Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2007-06-12
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S710000, C438S689000, C257SE21579, C257SE21252
Reexamination Certificate
active
11002198
ABSTRACT:
A first insulating film, a second insulating film, a third insulating film, an antireflective film, and a resist film are formed in this order on a lower-layer wiring. After dry etching the third insulating film and the second insulating film, using the resist film as a mask, the resist film and the antireflective film are removed by ashing. Thereafter, the first insulating film is dry etched, using the third insulating film as a mask, to form a wiring trench extending to the lower-layer wiring. The dry etching of the third insulating film and the second insulating film is performed using a gas containing fluorine at a pressure of 0.1 Pa to 4 Pa. Ashing is preferably performed using at least one of hydrogen and an inert gas.
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Anya Igwe U.
Baumeister B. William
Leydig , Voit & Mayer, Ltd.
NEC Electronics Corporation
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