Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2007-04-03
2007-04-03
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Reexamination Certificate
active
10739746
ABSTRACT:
Provided is a method for manufacturing a semiconductor device capable of preventing a solution from penetrating a lower layer by forming a poly silicon layer stacked of the films having the different grain boundary structures at border, wherein the solution is used in the subsequent strip and cleaning process.
REFERENCES:
patent: 4897360 (1990-01-01), Guckel et al.
patent: 4990997 (1991-02-01), Nishida
patent: 5347161 (1994-09-01), Wu et al.
patent: 5349325 (1994-09-01), McAllister
patent: 5441904 (1995-08-01), Kim et al.
patent: 5767004 (1998-06-01), Balasubramanian et al.
patent: 5970369 (1999-10-01), Hara et al.
patent: 6114196 (2000-09-01), Lin et al.
patent: 6162716 (2000-12-01), Yu et al.
patent: 6228701 (2001-05-01), Dehm et al.
patent: 6287944 (2001-09-01), Hara et al.
patent: 6297529 (2001-10-01), Imai
patent: 6495432 (2002-12-01), Chen et al.
patent: 6800543 (2004-10-01), Taguwa
patent: 1997-51990 (1997-07-01), None
Harrison Monica D.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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