Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-07-10
2007-07-10
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S149000, C438S459000, C257SE21122
Reexamination Certificate
active
10967279
ABSTRACT:
It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
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Fukumoto Yumiko
Goto Yuugo
Maruyama Junya
Takayama Toru
Tsurume Takuya
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Thai Luan
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