Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1987-02-19

1988-11-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 156662, 357 41, 357 67, 357 71, 437 41, 437 58, 437192, 437197, 437228, 437238, 437241, H01L 2100, H01L 21306, B44C 122, C03C 1500

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active

047847182

ABSTRACT:
Disclosed is a semiconductor device with its gate electrode and source/drain extraction electrodes being made of the same material on a GaAs substrate, and with its source/drain heavily doped regions, which are formed by doping Se in a lightly doped semiconductor layer on the GaAs substrate, self-aligned with both gate electrode and source/drain extraction electrodes.

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patent: 4455738 (1984-06-01), Houston et al.
patent: 4532004 (1985-07-01), Akiyama et al.
patent: 4546540 (1985-10-01), Ueyanagi et al.
patent: 4561169 (1985-12-01), Miyazaki et al.
patent: 4572765 (1986-02-01), Berry
patent: 4700455 (1987-10-01), Shimada et al.
Patent Abstracts of Japan, vol. 9, No. 178 (E-330) (1901), Jul. 23, 1985, Japanese Patent Application 60-50965 (Toshiba K.K.), Mar. 23, 1985.
Applied Physics Letter, vol. 40, No. 9, May 1, 1982, pp. 805-807, American Institute of Physica, New York, R. L. Chapman et al., "Transient Annealing of Selenium-Implanted Gallium Arsenide Using a Graphite Strip Heater".
IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, pp. 3432-3433, Armonk, N.Y., H. S. Bhatia et al., "High Performance Mesfet Structure".

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