Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-02-28

2006-02-28

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S455000

Reexamination Certificate

active

07005329

ABSTRACT:
Disclosed is a method for manufacturing a semiconductor device. The method comprises the steps of: providing a first substrate and a second substrate; forming a capacitor and a gate line on a first surface of the first substrate; forming an insulating layer on a resultant structure of the first substrate; bonding the second substrate to the insulating layer of the first substrate; turning a resultant structure over in such a manner that a second surface of the first substrate is an upper surface of the resultant structure; polishing the second surface of the first substrate by a predetermined thickness; forming an isolation layer for defining an active region by performing an isolation process with respect to the second surface of the first substrate for which a polishing process is finished; and forming a bit line on the active region in the first substrate.

REFERENCES:
patent: 5523254 (1996-06-01), Satoh et al.
patent: 6232155 (2001-05-01), Lee

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