Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-02-28
2006-02-28
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S510000, C438S517000, C438S519000, C438S521000, C438S524000, C438S527000, C438S542000, C438S546000, C438S547000, C438S548000, C438S561000
Reexamination Certificate
active
07005364
ABSTRACT:
The invention provides a method for manufacturing a semiconductor device with which an impurity introduction region and a positioning mark region can be formed aligned, based on a common insulating film pattern. The method for manufacturing a semiconductor device includes an insulating film pattern formation step; a first photosensitive pattern formation step of forming, on the insulating film pattern, a first photosensitive pattern with an aperture that exposes a positioning mark region, the first photosensitive pattern covering an impurity introduction region; a level difference formation step of forming in the semiconductor substrate, at the aperture formed in the insulating film pattern, a level difference for adjusting a position of the photomask at the positioning mark region; a first photosensitive pattern removal step of removing the first photosensitive pattern; and an impurity introduction step of introducing the impurities through the aperture formed in the insulating film pattern into the impurity introduction region.
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Baumeister B. William
Hamre Schumann Mueller & Larson P.C.
Lee, Jr. Granvill D.
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