Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1999-01-20

2000-12-26

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438238, 438655, 438682, H01L 218244, H01L 214763

Patent

active

061659002

ABSTRACT:
A semiconductor device manufacturing method is provided. In this method for interconnecting conductive layers, an insulating layer is formed over the surface of a semiconductor substrate having conductive layers formed thereon. The insulating layer is removed from over the conductive layers and a silicon layer is coated on the overall surface of the resultant structure. The insulating layer and some silicon are then removed from an area except for the area from a first conductive layer through a second conductive layer, and a refractory metal layer is formed on the overall surface of the resultant structure. This refractory metal is used for silicidation. A metal silicide layer is then formed from the first conductive layer through the second conductive layer by thermally treating the refractory metal layer.

REFERENCES:
patent: 5187122 (1993-02-01), Bonis
patent: 5946565 (1999-08-01), Ikeda et al.

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