Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-06-06

2006-06-06

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S257000, C438S206000, C438S259000, C438S451000

Reexamination Certificate

active

07056816

ABSTRACT:
A mask layer having an opening is formed on a semiconductor substrate. Next, oxygen ions and a first impurity are implanted into the semiconductor substrate using the mask layer as a mask. Then, the mask layer is removed. Next, the oxygen ions are heat treated to react and form an oxide film on the region where the first impurity has been implanted. Then, the oxide film is removed to form a depression in the semiconductor substrate. Next, a gate insulating film and a gate electrode are formed on the depression. Then a second impurity is implanted into the surface of the semiconductor substrate to form a source/drain. An impurity lighter than the oxygen ions and the second impurity is used as the first impurity.

REFERENCES:
patent: 4296429 (1981-10-01), Schroeder
patent: 5341011 (1994-08-01), Hshieh et al.
patent: 6170815 (2001-01-01), Gil
patent: 6440788 (2002-08-01), Mandelman et al.
patent: 6653229 (2003-11-01), Cox
patent: 06-151842 (1994-05-01), None
patent: 07-099310 (1995-04-01), None

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