Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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Details

C438S666000, C438S618000, C438S928000, C438S937000

Reexamination Certificate

active

07105451

ABSTRACT:
A resist pattern formed so as to expose a wafer edge region is used to expose an edge surface region of an Si support substrate by dry etching. Next, a conductive layer constituted as wirings by subsequent patterning is formed by sputtering.

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Wolf, S. and Tauber, R.N., “Silicon Processing for the VLSI Era”, vol. 1, pp. 445, 1986.

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