Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-06-14

2005-06-14

Thompson, Craig A. (Department: 2829)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S506000

Reexamination Certificate

active

06905948

ABSTRACT:
A method is provided for manufacturing a semiconductor device having a high breakdown voltage transistor and a low breakdown voltage transistor with different driving voltages provided in a common layer. The method includes: (a) implanting an impurity of a second conductivity type in a specified region of a semiconductor layer of a first conductivity type to form a first well; (b) implanting an impurity of the second conductivity type in a specified region of the semiconductor layer to form a second well having an impurity concentration different from the first well; and (c) implanting an impurity of the first conductivity type in a specified region of the first well to form a third well.

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