Method for manufacturing semiconductor device

Fishing – trapping – and vermin destroying

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437240, 437941, 437946, 148DIG118, H01L 2102

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active

053765915

ABSTRACT:
A, method for forming semiconductor device, includes forming an insulating film on a body by chemical vapor deposition, at low temperature raising the temperature of, the body, and exposing the body to plasma gas.

REFERENCES:
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patent: 4590091 (1986-05-01), Rogers
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patent: 5166101 (1992-11-01), Lee et al.
Fujino et al "Surface Modification of Base Material for TEOS/Oo.sub.3 . . . " J. of Electromechanical Soc. vol. 139, No. 6 (Jun. 1992).
Wolf, Silicon Processing for the VLSI Era vol. 1 Process Tech. pp. 182-189 & 504.
Electronics Letters, vol. 26, No. 11, May 24, 1990, Enage GB pp. 733-734, XP000108687, K. Aite et al. "Novel Low Temperature RF Plasma Annealing using NH3-N2 Gas Mixture".
RCA Review, vol. 37, No. 1, Mar. 1976, Princeton US pp. 55-77 W. Kern "Densification of Vapor-Deposited Phosphosilicate Glass Films". pp. 55, paragraph 1-p. 56, paragraph 2; FIG. 3.
J. Vac. Sci Technol B3(5) Sep./Oct. 1985 pp. 1352-1356.

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