Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-08-23
2005-08-23
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S706000, C438S296000, C438S359000, C438S424000
Reexamination Certificate
active
06933238
ABSTRACT:
A method for manufacturing a semiconductor element of the present invention includes the steps of: forming, on a substrate, a protection oxide film, a nitride film, an insulation film for protecting the nitride film; forming a trench; etching the insulation film to widen its aperture toward an active region; forming a thermal oxidation film inside the trench; etching the nitride film using the insulation film as a mask to slide a step defined by the thermal oxidation film and the nitride film from an upper edge of the trench toward the active region; forming a filling oxide film; exposing the nitride film; etching the filling oxide film; and removing the nitride oxide film and the protection oxide film.
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Nhu David
Oki Electric Industry Co. Ltd.
Rabin & Berdo P.C.
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