Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-08-23

2005-08-23

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S203000, C438S222000

Reexamination Certificate

active

06933201

ABSTRACT:
Provided is a manufacturing method of a semiconductor device, which comprises exposing a surface of a semiconductor substrate on which a heterocrystalline layer is to be grown inside of a second emitter opening portion of a hetero-junction bipolar transistor, removing water by preheat treatment in a reducing gas atmosphere, subjecting the substrate to second heat treatment in a reducing gas atmosphere at a temperature which is higher than the preheating treatment but does not adversely affect the impurity concentration distribution of another element on the semiconductor substrate, thereby removing an oxide film formed on the surface on which the heterocrystalline layer is to be grown, and then selectively causing epitaxial growth of the heterocrystalline layer on the thus cleaned surface in the second emitter opening portion. According to the present invention, reliability of a semiconductor device having a hetero-junction bipolar transistor can be improved.

REFERENCES:
patent: 6066520 (2000-05-01), Suzuki

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