Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S958000, C438S778000

Reexamination Certificate

active

06943125

ABSTRACT:
Provided is a method for manufacturing a semiconductor device including a plurality of different semiconductor elements with a transistor for fabricating the semiconductor device formed on a semiconductor substrate, an interlayer insulation film formed all over the upper part, and a hole trap site formed in the interlayer insulation film for preventing a mobile ion like H or moisture from penetrating, whereby it can be prevented that a leakage current increases abnormally where the voltage difference (Vgs) is lower than a threshold voltage.

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