Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-01-04

2005-01-04

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000

Reexamination Certificate

active

06838378

ABSTRACT:
The present invention discloses a method for manufacturing a semiconductor device, and in particular to a contact process of metal lines for connecting a local bit line for transmitting signals in an MAT to a new bit line for transmitting signals between the MATs in a layout structure having a bit line switch between the MATs. In the disclosed method, the metal line contact is formed according to the large first metal contact process and the small second metal contact process, and thus the contact hole having a high aspect ratio is formed to have a predetermined size, thereby embodying the hierarchical bit line structure.

REFERENCES:
patent: 6235572 (2001-05-01), Kunitomo et al.
patent: 6433381 (2002-08-01), Mizutani et al.
patent: 6611017 (2003-08-01), Hieda

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3399018