Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-01-08
2008-01-08
Pham, Hoai V (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C257SE21320
Reexamination Certificate
active
11486849
ABSTRACT:
A method for manufacturing a semiconductor apparatus, comprises:forming a first semiconductor layer on a semiconductor substrate of a transistor formation region;etching and removing a part of the first semiconductor layer sandwiched by a source formation region and a drain formation region to form a groove section in which a surface of the semiconductor substrate is exposed in the first semiconductor layer;forming a second semiconductor layer having an etching selectivity smaller than that of the first semiconductor layer on the semiconductor substrate of the transistor formation region so that the groove section is filled and the surface of the first semiconductor layer is covered;etching and removing the first semiconductor layer under the second semiconductor layer from the outside of the transistor formation region to form a cavity section under the second semiconductor layer; and forming a buried oxide film in the cavity section.
REFERENCES:
patent: 5882958 (1999-03-01), Wanlass
patent: 2005/0098094 (2005-05-01), Oh et al.
patent: 2000-124092 (2000-04-01), None
patent: 2002-299591 (2002-10-01), None
patent: 2005-0044140 (2005-05-01), None
He, et al., “Measurement and Simulation of Electrical and Thermal Property of Drain and Source on Insulator MOSFET's (DSOI),” IEEE International SOI Conference, pp. 55-57 (2002).
Edwards Angell Palmer & & Dodge LLP
Penny, Jr. John (Jack) J.
Pham Hoai V
Seiko Epson Corporation
LandOfFree
Method for manufacturing semiconductor apparatus having... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor apparatus having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor apparatus having... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3926214