Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-12-24
2000-10-31
Dutton, Brian
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438486, H01L 2100, H01L 2120
Patent
active
061401668
ABSTRACT:
A method for manufacturing a semiconductor, comprising crystallizing an amorphous silicon film formed on a substrate by employing lateral growth method using a catalyst element which accelerates the crystallization, wherein the duration of annealing accounts for 90% or more but less than 100% of the time for crystallization of the amorphous silicon film under the condition that no catalyst element is used. Also provided is a method for manufacturing a semiconductor, comprising: obtaining the equation which relates the annealing temperature to the duration of annealing in case crystallization of the amorphous silicon film initiates spontaneously; obtaining the equation which relates the annealing temperature to the laterally grown distance in case lateral growth method using a catalyst element for accelerating crystallization is applied to the amorphous silicon film formed on the substrate above; specifying the annealing duration and the annealing temperature which satisfy the relationship above for a desired growth distance; and performing annealing at a temperature not higher than said annealing temperature, and thereby laterally growing the amorphous silicon film by using a catalyst element. Further, semiconductor devices are provided using the semiconductor manufactured by the methods described above.
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Asami Taketomi
Fujimoto Etsuko
Ohtani Hisashi
Takano Tamae
Dutton Brian
Semicondutor Energy Laboratory Co., Ltd.
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