Method for manufacturing self-aligned titanium salicide using tw

Details Method for manufacturing self-aligned titanium salicide using tw Method for manufacturing self-aligned titanium salicide using tw

1997-08-05

1999-09-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438682, 438664, 438655, H01L 2144

Patent

active

059536330

ABSTRACT:
A method of manufacturing self-aligned titanium salicide is provided which includes the steps of forming a LOCOS isolation region on a silicon substrate, forming a titanium layer on the surface of the silicon substrate, performing a first two-step rapid thermal anneal on the silicon substrate in an ambient filled with hydrogen and nitrogen gases to convert the titanium layer into a titanium salicide layer, selectively etching the silicon substrate to remove the titanium layer that has not reacted with the silicon substrate, and performing a second two-step rapid thermal anneal on the silicon substrate in an ambient filled with hydrogen and nitrogen gases. Each of the two-step rapid thermal anneals include a first pre-heat step and a second anneal step.

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Delfino, M., B.-C. Chung, W. Tsai, and S. Salimian. "X-ray photoemission analysis and electrical contact properties of NF3 plasma cleaned Si surfaces," Journal of Applied Physics, vol. 72 pp. 3718-3725, Oct. 1992.

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