Method for manufacturing probe structure of probe card

Details Method for manufacturing probe structure of probe card Method for manufacturing probe structure of probe card

2007-06-01

2008-12-02

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S719000, C216S002000

Reexamination Certificate

active

07459399

ABSTRACT:
A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the method of the present invention, a dual etching process of a silicon substrate or an etching process of an SOI substrates is carried out using a sidewall insulating film pattern as an etching mask to facilitate a formation of a bump and microscopic probe structure of the probe card.

REFERENCES:
patent: 6059982 (2000-05-01), Palagonia et al.
patent: 6328902 (2001-12-01), Hantschel et al.

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