Method for manufacturing probe card

Details Method for manufacturing probe card Method for manufacturing probe card

2008-07-29

2008-07-29

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S106000, C257SE21231, C257SE21238, C257SE21508, C257SE21499, C257SE21517

Reexamination Certificate

active

07405144

ABSTRACT:
A method for manufacturing a probe card is provided. A first inactive layer, a first patterned photoresist layer and a first metal layer are sequentially formed on a substrate. The first metal layer has first through holes exposing a portion of the first patterned photoresist layer. A second inactive layer and a second patterned photoresist layer are sequentially formed thereon. The second patterned photoresist layer has second through holes exposing the first through holes. Pins are formed inside the first and the second through holes. A second metal layer is formed on the second patterned photoresist layer. One end of each pin is connected to the second metal layer. The pins and the second metal layer are taken out. A circuit carrier having third through holes is provided. The pins are inserted into the third through holes. The second metal layer is patterned to form pinheads.

REFERENCES:
patent: 5325052 (1994-06-01), Yamashita
patent: 6265888 (2001-07-01), Hsu
patent: 6608385 (2003-08-01), Zhou et al.
patent: 7227370 (2007-06-01), Kasukabe

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