Method for manufacturing porous silicon

Details Method for manufacturing porous silicon Method for manufacturing porous silicon

2008-07-08

2008-07-08

Culbert, Roberts (Department: 1792)

Etching a substrate: processes

Etching to produce porous or perforated article

C438S458000

Reexamination Certificate

active

07396479

ABSTRACT:
A method for preparing porous silicon in which an oxidized single crystal silicon wafer is first bonded to a polycrystalline wafer. The oxidized high quality wafer is then thinned to the desired thickness by grinding and polishing. An oxide may then be deposited on the wafer and patterned to expose regions were the porous silicon will be formed. The single crystal silicon wafer may then etched in the unmasked areas of the pattern to thin the single crystal silicon wafer to the desired thickness in the range of 0.1 microns to 1.0 microns. Next, the porous silicon may be formed using standard techniques. Once the porous silicon is formed the polycrystalline silicon wafer may be ground away and the oxide layer may be undercut to expose the porous silicon. Finally, an appropriate liner material may be applied to the porous silicon.

REFERENCES:
patent: 6406981 (2002-06-01), Ravi
patent: 6960285 (2005-11-01), Schoeniger et al.
patent: 7091108 (2006-08-01), Tolchinsky et al.
patent: 2003/0062149 (2003-04-01), Goodson et al.
patent: 2003/0085024 (2003-05-01), Santiago et al.
patent: 2003/0147225 (2003-08-01), Kenny, Jr. et al.
patent: 2003/0164231 (2003-09-01), Goodson et al.
patent: 2003/0173942 (2003-09-01), Kenny, Jr. et al.
USPTO Office Action, dated Feb. 25, 2008, for U.S. Appl. No. 10/883,469.

Affiliated with

Also associated with

Rating

Method for manufacturing porous silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing porous silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing porous silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2770428