Method for manufacturing poly-crystal sillicon having high resis

Details Method for manufacturing poly-crystal sillicon having high resis Method for manufacturing poly-crystal sillicon having high resis

1988-07-27

1990-10-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 27, 437 28, 437 60, 437918, 148DIG136, H01L 21265, H01L 2170

Patent

active

049652141

ABSTRACT:
Method for manufacturing polycrystalline silicon having high resistance, having a first step for depositing a polycrystalline silicon layer for a resistor area over a silicon semiconductor substrate; a second step for growing a first thermal oxide layer having a first specified depth over the polycrystalline silicon layer, ion-implanting with the nitrogen thereon, and growing a second thermal oxide layer having a second specified depth on the ion-implanted layer; a third step for forming a resistor pattern of the polycrystalline silicon with a photo etching method; and a fourth step for ion-implanting impurities in order to decrease the resistance of the polycrystalline silicon as contact regions to be used in resistance contacts with a fixed semiconductor region on the substrate.

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patent: 4762801 (1988-08-01), Kapoor
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, 1983, pp. 353-354.

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