Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-11-12
2010-10-12
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C257SE21409
Reexamination Certificate
active
07811867
ABSTRACT:
A method for manufacturing a pixel structure is provided. A gate and a gate insulating layer are sequentially formed on a substrate. A semiconductor layer and a second metal layer are sequentially formed on the gate insulating layer. The semiconductor layer and the second metal layer are patterned to form a channel layer, a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and drain are disposed on a portion of the channel layer. The gate, channel, source and drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.
REFERENCES:
patent: 7256076 (2007-08-01), Cho et al.
Fang Kuo-Lung
Huang Ming-Yuan
Liao Ta-Wen
Lin Han-Tu
Shih Chih-Hung
Au Optronics Corporation
Chen Jack
Jianq Chyun IP Office
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