Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-08-30
2011-08-30
Mulpuri, Savitr (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21535
Reexamination Certificate
active
08008135
ABSTRACT:
A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. The dielectric layer has a contact hole disposed over the active device. Next, a first photoresist layer is formed on the dielectric layer over the active device, and a transparent conductive layer is formed to cover a portion of the dielectric layer and the first photoresist layer. The transparent conductive layer is electrically connected to the active device via the contact hole. Besides, the transparent conductive layer is irradiated with use of a laser beam, and a portion of the transparent conductive layer on the first photoresist layer is removed, such that the other portion of the transparent conductive layer on the portion of the dielectric layer forms a pixel electrode. The first patterned photoresist layer is then removed.
REFERENCES:
patent: 5580473 (1996-12-01), Shinohara et al.
patent: 2006/0145161 (2006-07-01), Lee et al.
Huang Ming-Yuan
Shih Chih-Hung
Yang Chih-Chun
Au Optronics Corporation
Jianq Chyun IP Office
Mulpuri Savitr
LandOfFree
Method for manufacturing pixel structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing pixel structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing pixel structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2672523