Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2005-04-26
2005-04-26
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S003000, C438S381000
Reexamination Certificate
active
06884649
ABSTRACT:
The invention provides a method for manufacturing a piezoelectric element including a coating step of coating a substrate with a coating liquid for forming the piezoelectric element thereby forming a coated film, a drying step of drying the coated film, a preliminary sintering step of preliminarily sintering the coated film thereby forming an oxide film, a final sintering step of finally sintering the oxide film thereby forming a piezoelectric film, and a cooling step of cooling the piezoelectric film, wherein the steps are executed in the presence of a moisture-containing gas; in the coating step the substrate has a temperature equal to or less than 50° C. and the moisture-containing gas has a relative humidity of 60% RH or less at 25° C.; in the drying step, the substrate has a temperature equal to or less than 200° C. and the relative humidity is 10 to 70% RH; in the preliminary sintering step the substrate has a temperature of 200 to 450° C. and the relative humidity is 70 to 100% RH; in the final sintering step the substrate has a temperature of 500 to 800° C. and the relative humidity is 70 to 100% RH.
REFERENCES:
patent: 5164920 (1992-11-01), Bast et al.
patent: 6277294 (2001-08-01), Ozaki et al.
patent: 6331259 (2001-12-01), Ozaki et al.
patent: 6382775 (2002-05-01), Kubota et al.
patent: 6391527 (2002-05-01), Yagi et al.
patent: 6436301 (2002-08-01), Hiroki et al.
patent: 6474780 (2002-11-01), Kubota et al.
patent: 9-92897 (1997-04-01), None
patent: 10-139594 (1998-05-01), None
patent: 10-290035 (1998-10-01), None
C. V. R. Vusant Kumar, et al., “Lead Zirconate Titanate Films by Rapid Thermal Processing,” Appl. Phys. Lett., vol. 58, No. 11, Mar. 18, 1991, pp. 1161-1163.
Eritate Shinji
Kobayashi Motokazu
Kubota Makoto
Maeda Kenji
Shimizu Chiemi
Fitzpatrick, Cella, Harper and Scinto
Fuji Chemical Co. Ltd.
Tsai H. Jey
LandOfFree
Method for manufacturing piezoelectric film, piezoelectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing piezoelectric film, piezoelectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing piezoelectric film, piezoelectric... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3391777