Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2011-08-30
2011-08-30
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C257SE21561, C438S151000
Reexamination Certificate
active
08008169
ABSTRACT:
A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the first electrode are bonded, the single crystal silicon substrate is separated along the fragile layer to form a single crystal silicon layer over the supporting substrate. Crystal defect repair treatment or crystal defect elimination treatment of the single crystal silicon layer is performed; then, epitaxial growth is conducted on the single crystal silicon layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure. A second impurity silicon layer is formed on a surface side in the single crystal silicon layer which is epitaxial grown.
REFERENCES:
patent: 4180618 (1979-12-01), Alpha et al.
patent: 4409134 (1983-10-01), Yamazaki
patent: 4496788 (1985-01-01), Hamakawa et al.
patent: 4633034 (1986-12-01), Nath et al.
patent: 4727047 (1988-02-01), Bozler et al.
patent: 4816420 (1989-03-01), Bozler et al.
patent: 5304407 (1994-04-01), Hayashi et al.
patent: 5371037 (1994-12-01), Yonehara
patent: 5453858 (1995-09-01), Yamazaki
patent: 5514879 (1996-05-01), Yamazaki
patent: 5591987 (1997-01-01), Yamazaki et al.
patent: 5614732 (1997-03-01), Yamazaki
patent: 5665607 (1997-09-01), Kawama et al.
patent: 5701167 (1997-12-01), Yamazaki
patent: 5736431 (1998-04-01), Shinohara et al.
patent: 5750000 (1998-05-01), Yonehara et al.
patent: 5811348 (1998-09-01), Matsushita et al.
patent: 5840616 (1998-11-01), Sakaguchi et al.
patent: 5849601 (1998-12-01), Yamazaki
patent: 5854123 (1998-12-01), Sato et al.
patent: 5859445 (1999-01-01), Yamazaki
patent: 5932302 (1999-08-01), Yamazaki et al.
patent: 5968274 (1999-10-01), Fujioka et al.
patent: 6011277 (2000-01-01), Yamazaki
patent: 6023075 (2000-02-01), Yamazaki
patent: 6087648 (2000-07-01), Zhang et al.
patent: 6171674 (2001-01-01), Yamazaki et al.
patent: 6183816 (2001-02-01), Yamazaki et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6252249 (2001-06-01), Yamazaki
patent: 6281520 (2001-08-01), Yamazaki
patent: 6306213 (2001-10-01), Yamazaki
patent: 6331208 (2001-12-01), Nishida et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 6387829 (2002-05-01), Usenko et al.
patent: 6468617 (2002-10-01), Yamazaki et al.
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6566277 (2003-05-01), Nakagawa et al.
patent: 6605518 (2003-08-01), Ohmi et al.
patent: 6656271 (2003-12-01), Yonehara et al.
patent: 6692981 (2004-02-01), Takato et al.
patent: 6737676 (2004-05-01), Yamazaki
patent: 6818529 (2004-11-01), Bachrach et al.
patent: 6835523 (2004-12-01), Yamazaki et al.
patent: 7067844 (2006-06-01), Yamazaki
patent: 7098479 (2006-08-01), Yamazaki
patent: 7115902 (2006-10-01), Yamazaki
patent: 7211454 (2007-05-01), Yamazaki et al.
patent: 7229862 (2007-06-01), Yamazaki et al.
patent: 7253391 (2007-08-01), Koyama et al.
patent: 7301215 (2007-11-01), Kariya
patent: 7432468 (2008-10-01), Oka et al.
patent: 2003/0062129 (2003-04-01), Ni
patent: 2003/0119280 (2003-06-01), Lee et al.
patent: 2003/0143822 (2003-07-01), Kondo et al.
patent: 2004/0056332 (2004-03-01), Bachrach et al.
patent: 2004/0221809 (2004-11-01), Ohmi et al.
patent: 2004/0253896 (2004-12-01), Yamazaki
patent: 2005/0012887 (2005-01-01), Koyama
patent: 2005/0022864 (2005-02-01), Fujioka
patent: 2005/0089648 (2005-04-01), Yamazaki
patent: 2006/0225656 (2006-10-01), Horiguchi
patent: 2006/0238132 (2006-10-01), Kitamura et al.
patent: 2006/0246738 (2006-11-01), Isobe
patent: 2007/0018165 (2007-01-01), Yamazaki
patent: 2007/0057258 (2007-03-01), Fukuchi et al.
patent: 2007/0163996 (2007-07-01), Horiguchi
patent: 2008/0099065 (2008-05-01), Ito et al.
patent: 2008/0160661 (2008-07-01), Henley
patent: 2008/0245406 (2008-10-01), Yamazaki et al.
patent: 2008/0299689 (2008-12-01), Yamazaki
patent: 2009/0029498 (2009-01-01), Yamazaki et al.
patent: 2009/0029503 (2009-01-01), Arai et al.
patent: 2009/0047752 (2009-02-01), Yamazaki et al.
patent: 2009/0142879 (2009-06-01), Isaka et al.
patent: 2009/0142908 (2009-06-01), Isaka et al.
patent: 62-062073 (1987-12-01), None
patent: 02-053941 (1990-11-01), None
patent: 10-093122 (1998-04-01), None
patent: 10-093122 (1998-04-01), None
patent: 10-335683 (1998-12-01), None
patent: 10-335683 (1998-12-01), None
patent: 11-103082 (1999-04-01), None
patent: 11-163363 (1999-06-01), None
patent: 2000-150940 (2000-05-01), None
patent: 2000-277439 (2000-10-01), None
patent: 2002-261018 (2002-09-01), None
patent: 2002-348198 (2002-12-01), None
patent: 2004-014958 (2004-01-01), None
patent: 2005-049832 (2005-02-01), None
patent: 2005-268682 (2005-09-01), None
patent: 2007-005705 (2007-01-01), None
patent: 2007-048982 (2007-02-01), None
Kiyoshi Yasutake et al., “Low-Temperature and High-Rate Epitaxial Growth in Si by Atmospheric-Pressure Plasma CVD Method”, Oyobuturi; Sep. 10, 2007; pp. 1031-1036; vol. 76, No. 9; JSAP (the Japan Society of Applied Physics); with full English translation.
Arai,T et al., “41.2: Micro Silicon Technology for Active Matrix OLED Display,” SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1370-1373.
Hirose Takashi
Ohnuma Hideto
Booth Richard A.
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method for manufacturing photoelectric conversion device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing photoelectric conversion device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing photoelectric conversion device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2754153