Method for manufacturing pattern layer having different minimum

Details Method for manufacturing pattern layer having different minimum Method for manufacturing pattern layer having different minimum

1994-11-14

1997-06-24

McPherson, John A.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430311, 430396, 438948, G03F 700

Patent

active

056416091

ABSTRACT:
In a method for manufacturing a semiconductor device, layer including a first portion having a first height and a second portion having a second height different from the first height is formed on a substrate. Then, an image formation beam is irradiated onto the layer to form first and second patterns on the first and second portions, respectively. A minimum feature size of the first pattern is different from that of the second pattern.

REFERENCES:
patent: 4904569 (1990-02-01), Fukuda et al.
patent: 5455130 (1995-10-01), Kamon
patent: 5494780 (1996-02-01), Nakashima et al.

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