Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation
Reexamination Certificate
2011-01-11
2011-01-11
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Ionized irradiation
C438S796000, C257SE21027, C257SE21035
Reexamination Certificate
active
07867925
ABSTRACT:
The main object of the present invention is to provide a method for manufacturing efficiently a pattern formed structure which has a surface having a property-varied pattern and can be used to manufacture a color filter or the like. In order to achieve the object, the present invention provides a method for manufacturing a pattern formed structure, comprising: a patterning substrate preparing process of preparing a patterning substrate having a base material and a property variable layer which is formed on the base material and has a property variable by action of a photocatalyst based on irradiation with energy; and an energy radiating process of arranging a photocatalyst containing layer side substrate having a base body and a photocatalyst containing layer comprising at least the photocatalyst, and the patterning substrate so as to keep a given interval between the photocatalyst containing layer and the property variable layer, and then radiating energy onto the resultant at an intensity of 0.1 to 10 mW/cm2, thereby forming a property variable pattern in which the property of the property variable layer is varied.
REFERENCES:
patent: 5068260 (1991-11-01), Noguchi
patent: 5422315 (1995-06-01), Kobayashi
patent: 5648201 (1997-07-01), Dulcey et al.
patent: 6103452 (2000-08-01), Kakinuma et al.
patent: 6329209 (2001-12-01), Wagner et al.
patent: 2002/0072139 (2002-06-01), Kashiwabara
patent: 2002/0121206 (2002-09-01), Ooishi
patent: 2003/0008217 (2003-01-01), Kobayashi
patent: 2004/0070705 (2004-04-01), Kobayashi
patent: 2004/0223926 (2004-11-01), Kobayashi
patent: 2001-07492 (2001-03-01), None
patent: 2004-069918 (2004-03-01), None
Kobayashi Hironori
Uno Yusuke
Dai Nippon Printing Co. Ltd.
Jefferson Quovaunda
Ladas & Parry LLP
Smith Matthew S
LandOfFree
Method for manufacturing pattern formed structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing pattern formed structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing pattern formed structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2676019