Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-08-21
2007-08-21
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S508000, C438S508000, C257SE21372, C257SE21416
Reexamination Certificate
active
11095594
ABSTRACT:
A method for manufacturing an organic thin-film transistor with a plastic substrate, comprising steps of: providing a mold and a plastic substrate, said mold being provided with a relief printing structure; imprinting said plastic substrate by said mold so as to define source/drain electrode regions on said plastic substrate; forming a first electrode layer so as to form source/drain electrodes on said source/drain electrode regions on said plastic substrate; forming a plurality of semiconductor mesas, each of said semiconductor mesas covering a pair of said source/drain electrodes; forming an insulating layer; forming a second electrode layer, being separated from and on said semiconductor mesas by said insulating layer; and forming a passivation layer.
REFERENCES:
patent: 2004/0036201 (2004-02-01), Chou et al.
patent: 2004/0063267 (2004-04-01), Bernds et al.
patent: 2005/0062195 (2005-03-01), Chao et al.
Ho Jia-Chong
Huang Liang-Ying
Lee Cheng-Chung
Industrial Technology Research Institute
Pham Thanh V.
Smith Matthew
Troxell Law Office PLLC
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