Method for manufacturing organic thin film transistor substrate

Details Method for manufacturing organic thin film transistor substrate Method for manufacturing organic thin film transistor substrate

2008-03-19

2010-06-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S082000, C438S705000, C438S508000, C257S040000

Reexamination Certificate

active

07727797

ABSTRACT:
A method for manufacturing an organic thin film transistor substrate comprising forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, defining a channel region on the gate insulating layer between a source electrode and a drain electrode, neutralizing the channel region, forming a bank insulating layer on the source electrode and the drain electrode, and forming an organic semiconductor layer in a region prepared by the bank insulating layer.

REFERENCES:
patent: 6750149 (2004-06-01), Sasaki et al.
patent: 2007/0134832 (2007-06-01), Oh et al.
patent: 2005-228968 (2005-08-01), None
patent: 2006-165584 (2006-06-01), None
patent: 2006-173532 (2006-06-01), None

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