Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-07
2005-06-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000, C257S303000, C257S306000, C257S324000, C438S003000, C438S240000
Reexamination Certificate
active
06903397
ABSTRACT:
A semiconductor device embodiment may include a plurality of cells each including a transistor therein, the cells also each including a first capacitor electrode therein, the first capacitor electrodes being positioned on an insulating layer, the first capacitor electrodes in adjacent cells being separated from each other. The device may also include partitioning members on the insulation layer, wherein the partitioning members are positioned to separate the cells from one another, and the partitioning members include an upper surface thereon. The device also may include an organic layer on the first capacitor electrodes between the partitioning members, wherein the organic layer is not positioned in contact with the upper surface of the partitioning members. The device may also include a continuous second capacitor electrode on the organic layer, the second capacitor electrode layer formed to be a common electrode for cells. In another aspect, the organic layer may be capable of a polarization inversion by exposure to an electric field. In another aspect, the partitioning members may include first and second layers, the first layer being formed from a material having an affinity for an organic solution used to form the organic layer, the second layer being formed from a material having a non-affinity for the organic solution used to form the organic layer.
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Huynh Andy
Konrad Raynes & Victor LLP
Nelms David
Raynes Alan S.
Seiko Epson Corporation
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