Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1992-09-17
1999-11-09
Beck, Shrive
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438594, 42725517, 42725527, 427255392, H01L 2144, C23C 1642
Patent
active
059813660
ABSTRACT:
A method for forming a non-volatile memory having a floating gate electrode arranged therein. The floating gate electrode being formed by alternatingly laminating on a silicon substrate a polysilicon layer and a tungsten silicide layer with a tunnel oxide sandwiched between said substrate and said polysilicon layer. The tungsten silicide layer is formed with a CVD technique reducing WF.sub.6 gas with SiH.sub.2 Cl.sub.2 gas.
REFERENCES:
patent: 4692343 (1987-09-01), Price et al.
patent: 4737474 (1988-04-01), Price et al.
patent: 4816425 (1989-03-01), McPherson
patent: 4897368 (1990-01-01), Kobushi et al.
patent: 4966869 (1990-10-01), Hillman et al.
patent: 5087584 (1992-02-01), Wada et al.
patent: 5120571 (1992-06-01), Gill et al.
patent: 5120673 (1992-06-01), Itoh
patent: 5156990 (1992-10-01), Mitchell
patent: 5188976 (1993-02-01), Kume et al.
patent: 5190887 (1993-03-01), Tang et al.
patent: 5290725 (1994-03-01), Tanaka et al.
"Tungsten Silicide Films Deposited by SiH.sub.2 Cl.sub.2 -WF.sub.6 Chemical Reaction," T. Hara et al, J. Electrochem. Soc., vol. 136, No. 4, Apr. 1989 (pp. 1177-1180).
"Properties of WSi.sub.x Using Dichlorosilane in a Single-Wafer System," T. H. Tom et al, J. Vac. Sci. Technol. B., Nov./Dec. 1988 (pp. 1707-1713).
"Properties of Chemical Vapor Deposited Tungsten Silicide Films Using Reaction of WF.sub.6 and Si.sub.2 H.sub.6," Y. Shioya et al, J. Electrochem. Soc: Solid-State Science and Technology, May 1987 (pp. 1220-1224).
Ishihara Hiroshi
Koyama Yasuhiro
Beck Shrive
Chen Bret B.
Sharp Kabushiki Kaisha
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