Method for manufacturing nitride semiconductor substrate

Details Method for manufacturing nitride semiconductor substrate Method for manufacturing nitride semiconductor substrate

2009-06-08

2009-11-10

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S271000, C438S481000

Reexamination Certificate

active

07615472

ABSTRACT:
A method for manufacturing a nitride semiconductor substrate includes the steps of growing a first nitride semiconductor on a substrate, patterning the first nitride semiconductor to obtain a pattern surrounded by a plane equivalent to the (11-20) plane and having at least two concave portions that are similar in their planar shape, and growing a second nitride semiconductor layer, using a plane equivalent to the (11-20) plane in the first nitride semiconductor pattern as a growth nucleus.

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