Method for manufacturing nitride semiconductor substrate

Details Method for manufacturing nitride semiconductor substrate Method for manufacturing nitride semiconductor substrate

2006-09-25

2009-10-27

Pham, Thanh V. (Department: 2894)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S462000, C438S110000, C257S094000, C257S628000

Reexamination Certificate

active

07608525

ABSTRACT:
A method for manufacturing a nitride semiconductor substrate comprises the steps of: growing a first nitride semiconductor on a substrate, patterning the first nitride semiconductor to obtain a pattern surrounded by a plane equivalent to the (11-20) plane and having at least two concave portions that are similar in their planar shape, and growing a second nitride semiconductor layer, using a plane equivalent to the (11-20) plane in the first nitride semiconductor pattern as a growth nucleus.

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