Method for manufacturing nitride semiconductor device

Details Method for manufacturing nitride semiconductor device Method for manufacturing nitride semiconductor device

2009-07-13

2010-11-02

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S046000, C438S047000, C257SE21090

Reexamination Certificate

active

07825012

ABSTRACT:
A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.

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