Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-28
2008-08-19
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C257SE29010, C977S780000, C977S781000, C977S784000, C977S932000
Reexamination Certificate
active
07413973
ABSTRACT:
Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.
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Choi Sung Yool
Park Chan Woo
Pi Ung Hwan
Ryu Sang Ouk
Yu Han Young
Electronics and Telecommunications Research Institute
Estrada Michelle
Lowe Hauptman & Ham & Berner, LLP
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