Method for manufacturing movable portion of semiconductor...

Details Method for manufacturing movable portion of semiconductor... Method for manufacturing movable portion of semiconductor...

2007-05-08

2007-05-08

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C257S419000

Reexamination Certificate

active

10936539

ABSTRACT:
A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

REFERENCES:
patent: 6187685 (2001-02-01), Hopkins et al.
patent: 6250165 (2001-06-01), Sakai et al.
patent: 6277756 (2001-08-01), Ohara et al.
patent: 6365056 (2002-04-01), Robert et al.
patent: 6399516 (2002-06-01), Ayon
patent: 6740537 (2004-05-01), Helin
patent: A-4-105318 (1992-04-01), None
patent: A-8-181125 (1996-07-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing movable portion of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing movable portion of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing movable portion of semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3754343