Method for manufacturing MOS transistor and semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S374000, C257S382000

Reexamination Certificate

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10994640

ABSTRACT:
A method for manufacturing a metal-oxide-semiconductor transistor prevents the occurrence of a contact spiking phenomenon. The method includes forming a metal thin film and an isolation oxidation film on a semiconductor substrate, and selectively etching the isolation oxidation film such that the isolation oxidation film is left remaining only over a field oxidation film; heat treating the semiconductor substrate to form silicide by the metal thin film in gate, source, and drain regions; removing portions of the metal thin film that is not formed into silicide, that is, removing unreacted metal thin film; removing the isolation oxidation film left remaining on the field oxidation film; and heat treating the semiconductor substrate in an oxygen environment to form the unreacted metal thin film remaining on the field oxidation film into a metal oxidation film. The present invention is related also to a semiconductor device that employs a metal-oxide-semiconductor transistor made using the method.

REFERENCES:
patent: 6265271 (2001-07-01), Thei et al.
patent: 6274420 (2001-08-01), Xiang et al.
patent: 6350661 (2002-02-01), Lim et al.
patent: 6432816 (2002-08-01), Kim et al.
patent: 6479361 (2002-11-01), Park

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