Method for manufacturing minute silicon mechanical device

Details Method for manufacturing minute silicon mechanical device Method for manufacturing minute silicon mechanical device

1997-07-03

1999-11-09

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438411, H01L 2100, H01L 2176

Patent

active

059813083

ABSTRACT:
A method for manufacturing a minute silicon mechanical device, which includes the steps of forming a diffusion region by doping a predetermined portion of a silicon substrate with an impurity of high density; forming an epitaxial layer over the silicon substrate including the diffusion region and forming an oxide layer over the epitaxial layer; forming an ohmic contact layer at the lower surface of the silicon substrate; patterning the oxide layer to have a striped configuration at that portion of the oxide layer corresponding to the predetermined portion of the diffusion region, thus exposing a predetermined portion of the epitaxial layer; forming a plurality of beams having a striped configuration by etching the exposed portion of the epitaxial layer, using the oxide layer as a mask and then removing the oxide layer; and removing the diffusion region below the plurality of beams.

REFERENCES:
patent: 4809552 (1989-03-01), Johnson
patent: 5834333 (1998-11-01), Seefeldt et al.

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