Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2006-04-25
2006-04-25
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S041000, C216S067000, C216S074000, C216S079000, C438S706000, C438S712000, C438S717000, C438S719000
Reexamination Certificate
active
07033515
ABSTRACT:
A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer101, a second conductor layer102, a third conductor layer103, a first insulating layer104interposed between the first conductor layer and the second conductor layer, and a second insulating layer105interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer. The method includes forming the thin-walled portion in the second conductor portion by etching the material substrate from the first conductor layer down to the second insulating layer via a mask pattern58including a non-masking region corresponding to the thin-wall forming region of the second conductor layer.
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Kouma Norinao
Mizuno Yoshihiro
Nakamura Yoshitaka
Okuda Hisao
Sawaki Ippei
Ahmed Shamim
Armstrong Kratz Quintos Hanson & Brooks, LLP
Fujitsu Limited
Fujitsu Media Devices Limited
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