Method for manufacturing microstructure

Etching a substrate: processes – Etching of semiconductor material to produce an article...

Reexamination Certificate

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C216S041000, C216S067000, C216S074000, C216S079000, C438S706000, C438S712000, C438S717000, C438S719000

Reexamination Certificate

active

07033515

ABSTRACT:
A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer101, a second conductor layer102, a third conductor layer103, a first insulating layer104interposed between the first conductor layer and the second conductor layer, and a second insulating layer105interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer. The method includes forming the thin-walled portion in the second conductor portion by etching the material substrate from the first conductor layer down to the second insulating layer via a mask pattern58including a non-masking region corresponding to the thin-wall forming region of the second conductor layer.

REFERENCES:
patent: 6533951 (2003-03-01), Debar et al.
patent: 2002/0037601 (2002-03-01), Nomoto
patent: 2002/0158040 (2002-10-01), Lucak et al.
patent: 2004/0245588 (2004-12-01), Nikkel et al.
patent: 5-302182 (1993-11-01), None
patent: 10-214978 (1998-08-01), None
patent: 10-256569 (1998-09-01), None

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