Method for manufacturing microcrystalline cubic boron-nitride-la

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4272551, C23C 1634

Patent

active

056290535

ABSTRACT:
The method of the present invention provides in a simple manner, the deposition of boron nitride layers with microcrystalline cubic structure which are suitable as insulating layers in VLSI-circuits, as mask membranes in x-ray lithography, as well as coating hard substances. Due to the use of excited starting substances that already contain boron and nitrogen in one molecule and are preferably liquid or solid, and the use of a plasma-CVD-method, the method can be performed using in temperatures of below 500.degree. C. The excitation of the starting substance proceeds preferably in inductive or capacitative fashion in a hollow cathode.

REFERENCES:
patent: 4440108 (1984-04-01), Little et al.
patent: 4655893 (1987-04-01), Beale
patent: 4762729 (1988-08-01), Hirano et al.
patent: 4941430 (1990-07-01), Watanabe et al.
patent: 4971779 (1990-11-01), Paine, Jr. et al.
patent: 5082693 (1992-01-01), Paine, Jr. et al.
patent: 5096740 (1992-03-01), Nakagama et al.
Plasma Deposited Thin Films, J. Mort and F. Jansen CRC Press p. 3 1986 (no month).
Chayahara et al, Properties of BN Thin Films Deposited by Plasma CVD, Applied Surface Science, 33/34 1988, pp. 561-566 (no month).
Halverson et al., Effects of Charge Neutralization on Ion-Beam-Deposited Boron Nitride Films, Journal of Vacuum Science and Technology A, vol. 3, No. 6, Nov.-Dec. 1985 pp. 2141-2146.
Johnson et al, Radiation Damage Effects in Boron Nitride Mask Membranes Subjected to X-Ray Exposures, Journal of Vacuum Science and Technology B, vol. 5, No. 1, Jan.-Feb. 1987, pp. 257-261.
Patent Abstracts of Japan, vol. 10, No. 355, Nov. 1986 JA 61-153279.
Patent Abstracts of Japan, vol. 13, No. 339 (C-624) [3687], May, 1989 JA 01-116078.
Patent Abstracts of Japan, vol. 10, No. 350, Nov. 1986 JA 61-149478.
Rand et al., Preparation and Properties of Thin Film Boron Nitride, Journal of the Electrochemical Society Solid State Science, vol. 115, No. 4, Apr. 1968, pp. 423-429.
Schmolla et al, Amorphous BN Films Produced In a Double-Plasma Reactor for Semiconductor Applications, Solid-State Electronics, vol. 26, No. 10, 1983, pp. 931-939 (no month).
Schmolla et al, Low Temperature Double-Plasma Process for BN Films on Semiconductors, Journal of the Electrochemical Society, vol. 129, No. 11, 1982, pp. 2636-2637 (no month).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing microcrystalline cubic boron-nitride-la does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing microcrystalline cubic boron-nitride-la, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing microcrystalline cubic boron-nitride-la will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1383533

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.