Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-03-08
2005-03-08
Lebentritt, Michael S. (Department: 2824)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S694000, C438S750000, C438S754000
Reexamination Certificate
active
06864177
ABSTRACT:
A method for manufacturing of a metal line contact plug of a semiconductor device by performing a two step CMP process using (1) a first slurry solution having high etching selectivity of metal/insulating film and (2) a second slurry solution having small etching selectivity of metal/insulating film, thereby minimizing dependency on CMP devices and separating easily a metal line contact plug.
REFERENCES:
patent: 5244534 (1993-09-01), Yu et al.
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5676587 (1997-10-01), Landers et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 6046099 (2000-04-01), Cadien et al.
patent: 6235633 (2001-05-01), Jang
patent: 6261158 (2001-07-01), Holland et al.
patent: 6274478 (2001-08-01), Farkas et al.
patent: 6358832 (2002-03-01), Edelstein et al.
patent: 6375552 (2002-04-01), Cadien et al.
patent: 6436829 (2002-08-01), Layadi et al.
patent: 6439972 (2002-08-01), Misra et al.
patent: 6440857 (2002-08-01), Li et al.
patent: 6444139 (2002-09-01), Minamihaba et al.
patent: 6492260 (2002-12-01), Kim et al.
patent: 6520840 (2003-02-01), Wang et al.
patent: 6544892 (2003-04-01), Srinivasan et al.
patent: 6562711 (2003-05-01), Powers
patent: 6573173 (2003-06-01), Farkas et al.
patent: 6593239 (2003-07-01), Kaufman et al.
patent: 6596640 (2003-07-01), Fishcer et al.
patent: 6620037 (2003-09-01), Kaufman et al.
patent: 6635186 (2003-10-01), Small et al.
Korean Intellectual Property Office Notice of Rejection dated Oct. 27, 2003.
Ahn Ki Cheol
Jung Jong Goo
Kwon Pan Ki
Hynix / Semiconductor Inc.
Lebentritt Michael S.
Marshall & Gerstein & Borun LLP
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