Method for manufacturing MESFET

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

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438180, 438579, H01L 21338, H01L 2128

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active

057768056

ABSTRACT:
Method for manufacturing a metal semiconductor field-effect transistor (MESFET) in which a gate area contacting a semiconductor surface is diminished and a gate cross area is increased, to improve frequency characteristics of a device is disclosed, including the steps of: forming an n-type GaAs layer and a heavily doped n.sup.+ -type GaAs layer on a substrate, sequentially; forming a first insulating layer on the heavily doped n.sup.+ -type GaAs layer; forming a first photoresist layer having a first aperture on the first insulating layer; removing the first insulating layer of the first aperture so that the first insulating layer below both ends of the first photoresist layer is under-cut; forming a second insulating layer on the substrate in the first apertures to form a second apertures at each of under-cut portions and simultaneously removing the first photoresist layer; forming a third aperture in each of the second apertures and forming a second photoresist layer on the first and second insulating layers; removing the heavily doped n.sup.+ -type GaAs layer in each of the second apertures to expose the n-type GaAs layer; and forming a gate electrode in the second and third apertures to contact the n-type GaAs layer and simultaneously removing the second photoresist layer.

REFERENCES:
patent: 4040168 (1977-08-01), Huang
patent: 4367119 (1983-01-01), Logan et al.
patent: 4519872 (1985-05-01), Anderson, Jr. et al.
patent: 4670090 (1987-06-01), Sheng et al.
patent: 4692205 (1987-09-01), Sachdev et al.
patent: 5032541 (1991-07-01), Sakamoto et al.

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