Method for manufacturing memory element

Details Method for manufacturing memory element Method for manufacturing memory element

2009-06-16

2011-11-29

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S761000, C438S763000, C438S780000, C257SE21011, C257SE21299, C257SE21613

Reexamination Certificate

active

08067316

ABSTRACT:
A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm, a resin, and a solvent is placed over a first conductor and the solvent is vaporized. In this manner, a second conductor having the conductive particles and a memory layer including the resin between the first conductor and the conductive particles is formed.

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