Method for manufacturing magnetic random access memory

Details Method for manufacturing magnetic random access memory Method for manufacturing magnetic random access memory

2005-07-05

2005-07-05

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

Reexamination Certificate

active

06914003

ABSTRACT:
A method for manufacturing a magnetic random access memory is disclosed. An interlayer insulating film is formed on a lower read layer, a cell region of the interlayer insulating film is etched according to a photo etching process using a cell mask, and a MTJ layer is formed on the lower read layer of the cell region and the interlayer insulating film of a peripheral circuit region. The sidewall of the interlayer insulating film is exposed, the MTJ layer is left merely in the cell region by lifting off the interlayer insulating film, and a bit line which is an upper read layer connected to the MTJ layer is formed in a succeeding process. Accordingly, an effective area of an MTJ cell is obtained and the properties and reliability of the MRAM are improved.

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Search Report from German Patent and Trademark Office dated Dec. 2, 2003 (3 pages).

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