Method for manufacturing LOCOS structure

Details Method for manufacturing LOCOS structure Method for manufacturing LOCOS structure

1997-12-23

1999-04-20

King, Roy V.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438773, 4272481, 4272557, H01L 2176

Patent

active

058952560

ABSTRACT:
A method for forming a LOCOS structure comprising the steps of providing a substrate, then forming a mask layer above the substrate. Next, the mask layer is patterned to form an opening having a depth not more than the mask layer. Subsequently, the mask layer is patterned to form an active device region exposing the substrate that lies outside the area, wherein the opening is within the active device region. Hence, a mask layer having a thicker peripheral section and a thinner middle section over the active device region is formed. Finally, a dielectric layer is formed over the expose substrate to serve as a device isolation structure. This invention provides a thin mask layer over the active device area to prevent the occurrence of excessive stresses, and hence improve the quality of subsequently formed gate oxide layer. On the other hand, this invention also provides a thick mask layer at the peripheral region of the active device area, thereby preventing the lengthening of the bird's beak region due to a thin mask layer.

REFERENCES:
patent: 5502009 (1996-03-01), Lin
patent: 5504034 (1996-04-01), Rapisarda
patent: 5567645 (1996-10-01), Ahn et al.

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