Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-07-08
1999-06-22
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438165, 438587, H01L 2100
Patent
active
059151722
ABSTRACT:
Method for manufacturing TFTs including steps of forming a control electrode and control electrode line on a substrate, forming insulating film on the control electrode and the control electrode line, cleaning the substrate with the insulating film formed by a chemical or physical means, forming oxide film on the surface of the control electrode and control electrode line exposed by a film lacking portion generated in the insulating film after cleaning, forming a semiconductor layer via the insulating film on the control electrode, and forming a pair of electrodes constituting a semiconductor element together with the semiconductor layer.
REFERENCES:
patent: 5530265 (1996-06-01), Takemura
Hayashi Masami
Kubota Takeshi
Morita Takeshi
Noguchi Kazuhiko
Noumi Shigeaki
Bowers Charles
Hawranek Scott J.
Mitsubishi Denki & Kabushiki Kaisha
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