Method for manufacturing integrated MEMS resonator device

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C257S417000, C257SE27112

Reexamination Certificate

active

07985611

ABSTRACT:
The present invention provides a method for manufacturing a micro-electro-mechanical system (MEMS) resonator device using the same device layer, dielectric layer, and conductive layer that is used to create other electrical devices in a complementary metal oxide semiconductor (CMOS) process.

REFERENCES:
patent: 6531331 (2003-03-01), Bennett et al.
patent: 6876056 (2005-04-01), Tilmans et al.
patent: 6960488 (2005-11-01), Brosnihan et al.
patent: 2003/0042561 (2003-03-01), Funaki
patent: 2004/0245586 (2004-12-01), Partridge et al.
Notice of Allowance mailed Sep. 8, 2010 regarding U.S. Appl. No. 11/680,849, now U.S. Patent No. 7,868,403.
Final Office Action mailed Feb. 17, 2010 regarding U.S. Appl. No. 11/680,849, now U.S. Patent No. 7,868,403.
Nonfinal Office Action mailed Sep. 2, 2009 regarding U.S. Appl. No. 11/680,849, now U.S. Patent No. 7,868,403.

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