Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2006-01-05
2010-02-02
Huff, Mark F (Department: 1795)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C430S005000, C430S331000, C430S394000, C438S006000, C438S018000
Reexamination Certificate
active
07655481
ABSTRACT:
A method for manufacturing an industrial product encompasses: forming a intermediate product pattern, which implements a part of a intermediate product of the industrial product by a sequence of processes corresponds to a part of a procedure for manufacturing the industrial product; forming an interconnect-changing insulator on the intermediate product pattern; boring sampling contact holes in the interconnect-changing insulator so as to make bare a part of the intermediate product pattern to define sampling sites; delineating evaluation interconnects on the interconnect-changing insulator so that each of the evaluation interconnects can electrically connected to at least one of the sampling sites of intermediate product pattern; and measuring an electrical resistance between subject sampling sites through the evaluation interconnects so as to detect a product defect in the intermediate product pattern.
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Kaustuve Bhattacharyya, et al. “Investigation of Reticle Defect Formation at DUV Lithography”; 22ndAnnual Bacus Symposium on Photomask Technology, Brian J. Grenon, Kurt R. Kimmel, Editors, Proceedings of SPIE; vol. 4889; 2002; pp. 478-487.
Alam Rashid
Huff Mark F
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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